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Study of CMOS integrated signal processing circuit in capacitive sensors

机译:电容传感器中CMOS集成信号处理电路的研究

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摘要

A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output voltage's frequency. The whole circuit is designed with 1. 5 μm P-well CMOS process and simulated by PSpice software. Output frequency varies from 261. 05 kHz to 47. 93 kHz if capacitance varies in the range of IFF ~15PF. And the variation of frequency can be easily detected using counter or SCU.
机译:设计了一种基于电容谐振原理的CMOS集成信号处理电路,该电路结构简单,适用于电容式传感器。通过选择具有启动电路,CMOS类比开关和电路中双级逆变器的正反馈的自举参考电流镜,可以改善输出电压的波形。该电路的输出电压是对称方波信号。作为电容传感器一部分的灵敏电容的变化可以通过输出电压频率的变化来表示。整个电路采用1. 5μmP阱CMOS工艺设计,并通过PSpice软件进行仿真。如果电容在IFF〜15PF范围内变化,则输出频率从261. 05 kHz到47. 93 kHz不等。使用计数器或SCU可以轻松检测到频率变化。

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