Recovery of Hysteresis Capacitance-Voltage Curves of MOS Capacitors Passivated with bubbled Fluoride-Containing Glasses

摘要

The capacitance and voltage (C-V) characteristics of metal, oxide and silicon (MOS) capacitors pas- sivated by bubbled PbF_2-BaF_2-SiO_2-B_2O_3-GeO_2 glasses with various water and fluoride contents were investigated. As the OH~- absorption coeffi- cients of the glass increased, adverse effects on the recovery of hysteresis loops of C-V curve shifts were observed. The water content is closely related to the fluoride content in these glasses. A bubbling technique for blowing dry air through the molten glass liquid during melting was effective for removal of the OH absorption band in the fluoride-contain- ing glasses. The viscous flow point of the glass decreased with increasing degree of ionic character obtained from Hannay's equation.