NIMS Makes High-Performance Thin-Film Capacitor

摘要

Using a new high-k dielectric sheet with molecular-level thickness (1.5nm), scientists in Japan have developed one of the world's highest performance thin-film capacitors. The announcement of this breakthrough comes from a research group headed by Scientist Dr. Minoru Osada and Principal Investigator Dr. Takayoshi Sasaki of the International Center for Materials Nanoarchitectonics (MANA) at the National Institute for Materials Science (NIMS).