R&D Efforts Eye Higher Efficiency, Low-Cost Solar Cells

摘要

The Research and Development of Post-Silicon Ultra-High Efficiency Solar Cells project has been focusing on R&D to realize a cell conversion efficiency of 35 percent for non-concentration operation and 45 percent for concentration operation. The newly developed invert structure InGaP/GaAs/InGaAs (leV) 3-junction solar cell has already achieved 35.8 percent conversion efficiency under non-concentration operation and 42.1 percent conversion efficiency (in-house measurement) at a concentration of 230 suns, wherein both efficiencies are the world's highest so far. In addition, this project has also improved the crystal quality of new (In)GaAsN material for 4-junction solar cells, and the InGaN-based solar cell has achieved a conversion efficiency of 2.43 percent, which is the world's highest efficiency in terms of this base material.