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Power and Thermal Constraints-Driven Modeling and Optimization for Through Silicon Via-Based Power Distribution Network

机译:基于硅过孔的配电网络的功率和热约束驱动建模和优化

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摘要

The design of three-dimensional (3D) power delivery network (PDN) is constrained by both power and thermal integrity. Through-silicon via (TSV) as an important part of transmission power and heat in stack, the rational design of TSV layout is particularly important. Using minimal TSV area to achieve the required 3D PDN is significant to reduce manufacturing costs and increase integration. In this paper, we propose electrical and thermal models of 3D PDN, respectively, and we use them to solve the 3D voltage drop and temperature distribution problems. The accuracy and efficiency of our proposed methods are demonstrated by simulation measurement. Combining these two methods, a layer-based optimization solution is developed and allows us to adjust the TSV density for different layers while satisfying the global power and thermal constraints. This optimization is scalable and has the same guiding value for multichip stacks with different functions and constraints. A setup of four-chip stack is used to demonstrate the feasibility of this optimization and a large TSV area saving is achieved by this method.
机译:三维(3D)功率传输网络(PDN)的设计受功率和热完整性的约束。硅通孔(TSV)作为堆叠中传输功率和热量的重要部分,合理设计TSV布局尤为重要。使用最小的TSV面积来实现所需的3D PDN对于降低制造成本和提高集成度非常重要。在本文中,我们分别提出了3D PDN的电模型和热模型,并用它们来解决3D压降和温度分布问题。仿真测量证明了我们提出的方法的准确性和效率。结合这两种方法,开发了基于层的优化解决方案,它使我们可以在满足全局功率和热约束的情况下调整不同层的TSV密度。该优化是可扩展的,并且对于具有不同功能和约束的多芯片堆栈具有相同的指导价值。使用四芯片堆栈的设置来演示这种优化的可行性,并且通过这种方法可以节省大量的TSV面积。

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