Electron Microscope Studies of In_ xGa_(1-x)As/GaAs/Si Grown by Metalorganic Chemical Vapor Deposition

摘要

The microstructure of In_xGa_(1-x)As/GaAs (5 nm/5 nm, x = 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450℃, and subsequently annealed at 750℃, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moires observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.