机译:In_(1-x)Ga_xAs_yP_(1-y)晶格匹配InP的复介电函数的成分依赖模型
Department of Electrical Engineering & Computer Science, 111 DTM Bldg., The University of Michigan, 2360 Bonisteel Blvd., Ann Arbor, MI 48109-2108;
dielectric function; InGaAsP; optical properties;
机译:InP上生长的Ga_(x)In_(1-x)As / InAs_(y)P_(1-y)双异质结构和InAs_(y)P_(1-y)多层的表征调查
机译:In_(1-x)Al_xSb合金的介电函数,用于任意成分的参数化建模
机译:GaN,整体优化,螺钉位错,理论Ga_(1-x)Zn_xN_(1-x)O_x和In_(1-x)Zn_xN_(1-x)O_x合金的带隙减小和介电函数
机译:在<100个INP基板上生长的IN_(1-x)GA_AS_YP_(1-Y)薄膜的透射电子显微镜和光致发光研究
机译:镓(X)铟(1-X)砷(Y)磷(1-Y)光电调制器和方向耦合器的建模。
机译:关于蛋白质的介电常数:高分子建模的光滑介电函数及其实现在DelPhi
机译:应变对
机译:测量的组成和激光发射波长Ga sub x In sub 1-x as sub y p sub 1-y LpE Layt Lattice-matched to Inp substrates。