Maskless Selective Area Growth of InP on Sub-μm V-Groove Patterned Si(001)

摘要

Low pressure metalorganic chemical vapor deposition of InP on exactly oriented Si(001) substrates with a periodic V-groove pattern of periodicity ≤1.2 μm using a two temperature growth sequence (400 and 640℃) is reported. Planar InP layers with extremely low defect density of 7 x 10~4 cm~(-2) are obtained. For InP on V-grooves of width g ≤1.0 μm, a planar surface is formed after less than 1 μm of growth. Formation or suppression of antiphase domains (APDs) is a function of the widths of the (001)-oriented ridges. For s ≤ 1μm, epilayers are single domain and the direction is oriented parallel to the grooves. At 400℃, nucleation starts homogeneously on {111}-sidewalls and (001)-facets. While heating up to 640℃, InP migrates into the grooves, depleting almost completely the (001)-facets. During growth of the main layer, first the V-grooves are filled up. Subsequently (001)-ridges are overgrown laterally or voids are formed on top of them. This mechanism is responsible for both planarization and APD-suppres-sion. The surface migration length of InP on Si(001) at 640℃ is estimated to be ≈ 0.5 μm.