Defect Structures in Silicon Merged Epitaxial Lateral Overgrowth

摘要

Merging of two epitaxial lateral overgrowth fronts has been achieved to produce thin silicon-on-insulator (SOI) structures. The electronic quality of the material is generally of high quality; however, at the merger interface are defects associated with improper merging. Defects at the oxide/silicon interface and the merging interface were characterized using transmission electron microscopy. Device performance indicated the need for a process modification to improve the material quality for potential electronic applications.