Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100) Surfaces

摘要

Utilizing the Stranski-Krastanov growth mode, three-dimensional InP islandsare formed on a GaInP/GaAs surface using metalorganic chemical vapor deposition. The islands have been investigated with atomic force microscopy, and the effect of the deposition rate on the shape of the islands has been quantified. The height of the islands varies with deposition rate, whereas the base diameters are nearly constant around 1260 ± 35A. The island height is 290 ± 12A at a high (2.6 ML/s) deposition rate and decreases to approximately 250 ± 16A for low (0.1 ML/ s) and moderate (0.8 ML/s) deposition rates.