Growth of Ga_xIn_(1-x)As_(1-y)Sb_y Alloys by Metalorganic Chemical Vapor Deposition

摘要

The quaternary GaInAsSb alloy system with direct band gaps adjustable in wavelength from 1.7 to 4.3 μm, which may provide the basis for emitters and detectors over this entire region, was studied. Alloys of GalnAsSb were grown lattice-matched on GaSb substrates by metalorganic chemical vapor deposition using a conventional atmospheric pressure horizontal reactor. The properties of the GalnAsSb alloys were characterized by single crystal x-ray rocking curves, the double crystal x-ray rocking curves, the photoluminescence and infrared absorption. A preliminary study of the capabilities of scanning electron acoustic microscopy in the characterization of GalnAsSb alloy has been made, some observations are briefly compared with scanning electron microscopy.