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Effect of Rapid Thermal Annealing on Sputtered CaCu3Ti4O12 Thin Films

机译:快速热退火对溅射CuCu 3 Ti 4 O 12 薄膜的影响

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Calcium copper titanium oxide (CaCu3Ti4O12, abbreviated to CCTO) films were deposited on Pt/Ti/SiO2/Si substrates at room temperature (RT) by radiofrequency magnetron sputtering. As-deposited CCTO films were treated by rapid thermal annealing (RTA) at various temperatures and in various atmospheres. X-ray diffraction patterns and scanning electron microscope (SEM) images demonstrated that the crystalline structures and surface morphologies of CCTO thin films were sensitive to the annealing temperature and ambient atmosphere. Polycrystalline CCTO films could be obtained when the annealing temperature was 700°C in air, and the grain size increased signifi- cantly with annealing in O2. The 0.8-μm CCTO thin film that was deposited at RT for 2 h and then annealed at 700°C in O2 exhibited a high dielectric constant (ε′) of 410, a dielectric loss (tan δ) of 0.17 (at 10 kHz), and a leakage current density (J) of 1.28 × 10−5 A/cm2 (at 25 kV/cm).
机译:在Pt / Ti / SiO 2上沉积钙铜钛氧化物(CaCu 3 Ti 4 O 12 ,缩写为CCTO)膜 / Si基板在室温(RT)下通过射频磁控溅射。通过快速热退火(RTA)在各种温度和各种气氛下对沉积的CCTO薄膜进行处理。 X射线衍射图谱和扫描电子显微镜(SEM)图像表明CCTO薄膜的晶体结构和表面形态对退火温度和环境气氛敏感。当在空气中退火温度为700°C时,可以获得多晶CCTO薄膜,并且随着O 2 的退火,晶粒尺寸显着增加。在室温下沉积2 h,然后在O 2 中在700°C退火的0.8-μmCCTO薄膜表现出410的高介电常数(ε'),介电损耗(tanδ) )为0.17(在10 kHz时),漏电流密度(J)为1.28×10 -5 A / cm 2 (在25 kV / cm时)。

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