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Temperature-Dependent Phase Segregation in Cu/42Sn-58Bi/Cu Reaction Couples under High Current Density

机译:高电流密度下Cu / 42Sn-58Bi / Cu反应对中温度相关的相分离

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摘要

The effects of current stressing at 104 A/cm2 on Cu/42Sn-58Bi/Cu reaction couples with a one-dimensional structure at 23°C, 50°C, and 114°C were investigated. The microstructural evolution during electromigration was examined using scanning electron microscopy. The temperature dependence of the coarsening of the Bi-rich phase, the dominant migrating entity, and hillock/whisker formation in eutectic Sn-Bi were investigated under high current density. During current stressing at 104 A/cm2, the average size of the Bi-rich phase remained the same at 23°C, increased at 50°C, and shrank at 140°C. Bi accumulated near the anode side at both high (50°C, 140°C) and low temperature (23°C). At high temperatures, both Sn and Bi diffused towards the anode side, but Bi moved ahead of Sn during current stressing. However, at low temperatures, Sn reversed its direction of migration to the cathode side. Pure Bi hillocks/whiskers and a mixed structure of Sn and Bi hillocks were extruded as a consequence of compressive stress from electromigration- induced mass flow towards the anode side.
机译:在23°C,50°C下以10 4 A / cm 2 施加电流对具有一维结构的Cu / 42Sn-58Bi / Cu反应偶的影响在114℃下进行了研究。使用扫描电子显微镜检查电迁移过程中的微观结构演变。在高电流密度下研究了富Bi相的粗化,主要迁移实体以及共晶Sn-Bi中小丘/晶须形成的温度依赖性。在电流为10 4 A / cm 2 的过程中,富Bi相的平均尺寸在23°C时保持不变,在50°C时增大,然后收缩在140°C下。 Bi在高温(50°C,140°C)和低温(23°C)时都在阳极附近累积。在高温下,Sn和Bi都向阳极侧扩散,但是在电流应力作用下Bi移到Sn之前。但是,在低温下,Sn将其迁移方向反转到阴极侧。由于电迁移引起的质量流向阳极侧的压缩应力,挤压出了纯Bi小丘/晶须以及Sn和Bi小丘的混合结构。

著录项

  • 来源
    《Journal of Electronic Materials》 |2009年第2期|p.273-283|共11页
  • 作者

    Guangchen Xu; Hongwen He; Fu Guo;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 00:04:47

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