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Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs hetero structures grown on exact GaAs(111)B substrates

机译:在精确的GaAs(111)B衬底上生长的外延MnAs / NiAs / MnAs异质结构的生长和磁性

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We have investigated the growth, structural characterization and magnetic properties of epitaxial MnAs/NiAs/MnAs heterostructures grown on exact GaAs(111)B substrates by molecular beam epitaxy. Reflection high energy electron diffraction observation during the growth and cross-sectional transmission electron microscopy analysis revealed that the epitaxial orientation of [0001]MnAs//[0001]NiAs//[(1) over bar(1) over bar(1) over bar ]GaAs is maintained throughout the growth with atomically abrupt heterointerfaces. The magnetization loops of the heterostructures show double-step features when the thickness of the NiAs interlayer was more than 8 nm. The magnetic properties, such as the temperature dependence of magnetization, were sensitive to the growth conditions, which mainly results from the crystalline quality of the top MnAs layer. © 2005 Elsevier B.V. All rights reserved.
机译:我们已经研究了通过分子束外延在精确的GaAs(111)B衬底上生长的外延MnAs / NiAs / MnAs异质结构的生长,结构特征和磁性。在生长和截面透射电子显微镜分析过程中的反射高能电子衍射观察表明,[0001] MnAs // [0001] NiAs // [(1)的外延取向超过bar(1)over bar(1)over在整个生长过程中,GaAs都具有原子突然的异质界面。当NiAs中间层的厚度大于8nm时,异质结构的磁化回路显示出双步特征。磁性能(例如磁化强度的温度依赖性)对生长条件敏感,这主要是由顶部MnAs层的晶体质量决定的。 &复制; 2005 Elsevier B.V.保留所有权利。

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