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The improvement of GaN epitaxial layer quality by the design of reactor camber spacing

机译:反应堆外倾角间距设计提高GaN外延层质量

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GaN epitaxial layers are grwon by a separate-flow metalorganic chemicla vapor depositon (MOCVD) reactor with various distances between the substrte and the ceiling of quartz chamber. The spacing of the groth chamber between substrate and ceiling is varied from 18 to 5 mm. This spacing affecs the reactant gas flow pattern near the subsrate surface and thus influences the quality of the epitaxial layers. In addtion, wke use an upper-stream H_2 flow to improve the thermal convection of the reactant gases and the formation of laminar flow above the substrate. The surface morphology and the Hall mobiltiy of GaN are found to depend on this H_2 flow rate. A mirror-like surface can be grwon for both 10 and 18 mm spacing designs, if the H_2 flow rate is adused to around the 5000 cm~3/min range. X-ray diffraction. photoluminescence, and Hall measuremetn characterized the quality of GaN epitaxial laeyrs. Device-quality epitaxial laeyrs can be obtained, if the flow spacing is tuned to be 10 mm.
机译:GaN外延层是通过分流金属有机化学气相沉积(MOCVD)反应器生长的,该反应器的基体和石英室顶部之间的距离各不相同。基质和顶板之间的泡沫腔室的间距从18毫米到5毫米不等。该间距使反应气体在底材表面附近的流动方式产生影响,从而影响外延层的质量。另外,使用上游的H_2流来改善反应物气体的热对流以及在衬底上方形成层流。发现GaN的表面形态和霍尔迁移率取决于该H_2流速。如果H_2流速在5000 cm〜3 / min范围内,则可以在10 mm和18 mm间距的设计中制作出类似镜面的表面。 X射线衍射。的光致发光和霍尔测量技术表征了GaN外延层的质量。如果将流间距调整为10 mm,则可以获得设备质量的外延层。

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