Impurioty incorporation during sublimatin grwoth of 6H bulk SiC

摘要

Secondary ion mass spectrosocpy (SIMS) and inductively coupled plasma spectroscopy (ICP-OES and ICP-MS) have been used to study the impruity concentration within dfirerent stage of the SiC crystal growth technology. The pure constituens silicon and carbon, the synthesized SiC powder as well as sublimation gron crystalsl of 6H polytype were investigated. It was found that the main impurites are iron, aluminium, tungsten, vandaium, nickekl and copper. Although hgih purity silicon and carbon were sed as sarting mateirals the impurity level increases due tion the preparation technique. However, in comparison to the SiC source powder the crystals show a reducion in the impurity concentration by one order of magnitude.