Investigations on electrochemicla growth and proeprites of mercury cadmium telluride semiconducotr thin films klfor device fbrication

摘要

Thin films of Hg_1-xCd_xTe was deposited on 'Ni] subsrates by electrodepositon techqnieu from an aqueous solution containing mxiture of CdCl_2, HgCl_2 and TeO_2 by potentiostatic technique. The co-depositon conditons of Hg, Cd and Te were optimized by using voltammogram and Pourbaix diagram as a tool From the same electrolyte, at lower potential Hg rich MCT was formed and at a higher potential Cd rich MCT was formed. The grown films were anneled the films was confirmed by hot or thermoelectric robe method. The thickness of the film was in the order of ～1 μm and it has a preerential orientation in (1 1 1) direction. Thermal annealing improves the crystaline quality of the as-deposited film. The Cd rich MCT exhibt a cauliflower morphology and the grian size is bigger than the Hg rich MCT film.