Rapid thermal processing of epitaxial II-VI heterostrucutres

摘要

The rapid thermal processing combined with metalorganic chemicla vapor depsotion (RTP-MICVD) has een appied to the growth of II-VI heterostrucutres of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the griowth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher grwoth rates (up to 60μm/h) compred to conventinal MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.