Some properites of heterostructures based on new semiconductor ZnCdHgTe

摘要

Results of structural and electrical characteristics investigations performed for new heterostrucutres based on narrow-gpa semiconductor ZnCdHgTe have been reported. The epilayers p-Zn_xCd_yHg_1-x-yTe/pHg_0.8Cd_0.2 Te and p-Zn_xCd_yHg_1-x-yTe/P-Zn_0.04Cd_0.96Te (x=0.10-0.13, y=0.00-0.08) obtained by modified LPE technique of ZnCdHgTe films on subsrates of (1 1 1) orientation. The detailed Hall measuremetns showed the fromation of inverse conductivity type "channel-island" structure in subsyrface region of as-grown epilayer. The study of I-V characteristics in the temeprautre range 177-290 K at applied voltage V_a=0-4 V shows that the carrier transport processes are caused by the recombination of majority carriers tunneling form the bulk of Hg_0.8Cd_0.2Te substrate material with localized states in ZnCdHgTe and by the interaction of free carriers, and "potential relief" appeared as consequence of the conductivity inversion mentioned above.