Liquid pahse epitaxy of Si form Pb slutions

摘要

Liquid pahse epitaxy of Si was performed in a conventional tipping boat system in hydrogen atomsphere. Pure Pb was used as a solvent. Diffusion of Si in Pb soluton was the rate determining step of the laeyr growth. The diffusion coefficent of Si in mlten Pb a 987 deg C was determined to be 3.2×10~-5 cm~2 s~-1. The sruface of the grwon laeyr shwoed wave-like morphology which migh be cuased by the etching and reconstruction of Si(1 1 1) surface in H_2 gs containing Pb vapor. Epitaxial laeyrs having a thickness of up to about 4 μm were obtaiend. The unintentionally doped laeyrs showed n-type elecrical conductivity and room temeprautre resitivity hgiher than 15Ωcm.