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Growth of WO_3 crystals from W-Ti-O thin films

机译:W-Ti-O薄膜生长WO_3晶体

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摘要

The nucleation and growth of WO_3 signle crystals induced by annealing W-Ti-O thin films deposited onto Al_2O_3 substrates has been stuided by micro-Raman spectroscoy. Amorphous W-Ti-O layers have been obtained from RF sputtering W-Ti alloy targets in a reactive atmoshpere. Annealing of these laeyrs yielded several WO_3 phase dependiong on the annealing temeprature. Ti content, and duration of the heat treatment. Moncolinic γ-WO_3 crystallites were found dispersed onto the laeyr su4rface, while in the T-rich laeyr temeplating the Al_2O_3 substrate hgiehr symmetry WO_3 phases have been identified.
机译:显微拉曼光谱研究了通过退火沉积在Al_2O_3衬底上的W-Ti-O薄膜引起的WO_3信号晶体的成核和生长。非晶态W-Ti-O层是从反应性气氛中的RF溅射W-Ti合金靶获得的。这些层的退火产生几个WO_3相,这取决于退火温度。 Ti含量和热处理时间。发现单斜晶γ-WO_3微晶分散在Laeyr表面上,而在富含T的Laeyr中以Al_2O_3底物为对称的WO_3相为代表。

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