State of the art 6' SI GaAs wafers made of conventionally grown LEC-crystals

摘要

6" SI GaAs single crystals are grwon by the standard LEC-process in a enw-generation multi-heater puller designed for charges up to 50 kg and crucibles up to 12", applying the carbon controlled growth technology. It is demosnrated that the increasing requriements of device manufactures with regard to macroscopic and mesoscopic homogeneity of electrical properties, mechanical strength, flatness and cleanliness of the wafers can be fully met by LEC grown 6" kcrystals.