Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman tecique

摘要

The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technqieu as been investigated for different concentrations. The resistivity, mobiltiy and carrier density were analysed. Thue fromation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.