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A method to grown silicon crystallites on glass

机译:在玻璃上生长硅微晶的方法

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In our laboratory a method has been developed for lwo temeprautre growth of silicon on glass from metallic solutions [1]. This technqiue is based on creating pointlike nucleation centres using naturla coalescence phenomena of the metallic solven for making the substrate. Thus, uncontrolled spontaneous nucleaion can be avoided and locally defined selective grwoth of silicon cyrstallites seeded by the Si saturated metallic solution droplets occurs. The nucleation of silicon on the substrte surface and the grwoth of crystallites must be initiated and maintained by a stedy temeprature gradient. The material transport is gvoerned by a vapour-liquid-solid (VLS) mechanism. As a first result of this artificical nucleus selection principle silicon crystallites have been grwon in dimensions of 10μm. Size and distribution of the solvent droplets s well as the morphology of the grown silicon crstalites have been charactrized by SEM and optical microscopy. The crystallites show good adhesion on glass and are sufficeitnly regular arranged. The focused ion beam (FIB) method folloed by X-ray microanalysis has been used to identify silicon crystallites still encapsulated by the solution.
机译:在我们的实验室中,已经开发出一种方法,用于从金属溶液中在玻璃上进行硅的temeprautre生长[1]。该技术基于利用金属溶剂的自然聚结现象创建点状形核中心来制造基板。因此,可以避免不受控制的自发核素作用,并且发生了由Si饱和金属溶液小滴注入的硅晶硅的局部限定的选择性生长。基体表面上的硅成核和微晶的生长必须通过稳固的温度梯度来引发和维持。通过蒸气-液体-固体(VLS)机制来控制物料的运输。作为这种人工晶核选择原理的第一个结果,硅微晶的尺寸已增长到10μm。通过SEM和光学显微镜表征了溶剂滴的大小和分布以及生长的硅晶体的形态。微晶在玻璃上显示出良好的粘合性,并且足够规则排列。通过X射线微分析的聚焦离子束(FIB)方法已用于鉴定仍被溶液封装的硅微晶。

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