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Bulk propertiels of very large diameter silicon single crystals

机译:大直径硅单晶的散装性质

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It has been experimentally found that it will be difficult to grow 300 mm or larger diameter crysals with similar quality as for 200 mm or smaller diamater crystals. This phenomenon can be understood within the frame of the Voronkov theory in which the value of the parameter V/G (V=pull rate, G=temeprature gradeitn at the growth interface) determines which type of defect forms in the growing crystal. Due to fundamental technological constrints, the pull rate of silicon single crystals has to be reduced as the dimater increases. For crystal diamters kbeyond 300 mm, the reduction of pull rate is so large, that V/G(r) (r=radial position) can probably no longer be kept above the criticla value C_crit=1.34 ×10~-3 cm~2 K~-1 min~-1 over the entire crystal volume by the present grwoth technoloyg. As a result, the defect behavior of the silicon bulk changes. The aggregtion of defects is now dominated by excess Si interstitials instead of vacancies and, hence, L-pits (dislocation loops) are observed instead of microvoids. Unless new methods for the suppression of L-pits can be developed, this will seriously challenge the sue of polised waters in very large diameter device manufavturing lines, as L-pits can severely damage the deive performance. A promising solution to the defect probelm appears to be P+p -eip wafers.
机译:实验已经发现,要生长出与200毫米或更小直径的直径相似质量的300毫米或更大直径的晶状体将是困难的。可以在沃龙科夫理论的框架内理解该现象,其中参数V / G的值(V =拉速,G =生长界面处的梯度)确定在生长晶体中形成哪种类型的缺陷。由于基本的技术约束,硅单晶的提拉速率必须随着变径的增加而降低。对于直径大于300 mm的晶体直径,拉拔速率的降低是如此之大,以致V / G(r)(r =径向位置)可能不再保持在注释值C_crit = 1.34×10〜-3 cm〜2以上通过目前的常规技术,在整个晶体体积上的K〜-1 min〜-1。结果,硅块的缺陷行为改变。缺陷的聚集现在主要由过量的硅间隙而不是空位来控制,因此,观察到的是L坑(位错环)而不是微孔。除非能够开发出抑制L坑的新方法,否则这将严重挑战超大直径设备制造生产线中浓水的起诉,因为L坑会严重损害其演绎性能。缺陷探针的有前途的解决方案似乎是P + p-eip晶圆。

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