Carbon, oxgyen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach

摘要

The ChemSage code [Eriksson and Hack, Metall. Trans. B 12 (1990) 1013] to minimize the total Gibbs free energy was used to calculate phase quilibria in the complex thermochemical system representing LEC GaAs crystal growth which comprises the grwoth atomsphere, the liquid boron oxide, the GaAs melt and solid pahses including the GaAs crystal. The behawviour of C, B, O, N and H in lthe crystal growth melt at 1509.42 K is investigated in dependence on relevant technological parameters.