Crystal growth, fabriciton and evalaiton of cadmium manganese teluride gamma ray detectors

摘要

Cadmium manganeset telluride (Cd_1-xMn_xTe) is a diluted magnetic semiconducor material which forms the basis for many important devices such as IR detectos, solare cels, magnetic field sensors, optical isolators, and visible and near IR lasers. High resistivity (>10~10Ω cm) and hgih μτ(>10~-6 cm~2/V) materia, which are the two prerequisties in the fabricaion of radiation detectors, has recently been demosnrated at Brimrose Corp. This paper presents the crystal growth of intentionally vandium doped crystals, the surface preparation and contacing proceudre, as well as the best detector performance obained so far. Dark currnt characteristics, and low temeprautre photolumienscence resutls are also presented and discussed.