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Chemical reaction process and the single crystal growth of CuInS_2 compound

机译:化学反应过程与CuInS_2化合物的单晶生长

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In order to establish the preparation method of high-quality CuInS_2 single crystals, we have investigated the chemical reaction process by means of differential thermal analysis and powder X-ray diffraction measurements. In the chemical reaction process of a Cu+ In+2S mixture, an explosive exothermic reaction occurs at 640 deg C, which is ascribed to the formation of products of the In-S system. In the case of a CuIn+2S mixture, an explosive sulfurizaiton reaction occurs at about 700 deg C, leading to the CuInS_2 phase. The melting point decreases by 17 deg C under S vapor pressure increasing from 200 Torr to 8 atm. The formation of heterogeneous products are greatly suppressed by the sulfurization of CuIn alloy at temperatures higher than 750 deg C. In conclusion, high-quality bulk single crystals can be grown by the sulfurization horizontal Bridgeton method with controlling S vapor pressure.
机译:为了建立高质量的CuInS_2单晶的制备方法,我们通过差热分析和粉末X射线衍射测量研究了化学反应过程。在Cu + In + 2S混合物的化学反应过程中,爆炸性放热反应在640℃发生,这归因于In-S系统产物的形成。在CuIn + 2S混合物的情况下,爆炸性硫化反应在约700摄氏度发生,导致CuInS_2相。在S蒸气压力下,熔点从200托增加到8atm,降低了17℃。 CuIn合金在高于750摄氏度的温度下硫化会极大地抑制异质产物的形成。总之,通过控制S蒸气压的硫化水平布里奇顿方法,可以生成高质量的块状单晶。

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