RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate

摘要

We use reflection high-energy electron diffraction (RHEED) oscillations to study the substrate temperature and In/Ga flux ratio dependencies of the growth of pseudomorphic InGaAs layers on gas. The growth of InGaAs on GaAs shows strongly damped oscillations which is dependent on the substrate temperature. The In mole fradion dorps almost linearly with increasing substrate temperature above 580 deg C, wiht a dropping rate of 0.08-0.13/100/deg C which is dependent on IOn/Ga beam equivalent pressure (BEP) ratio. The In mole fraction drops almost linearly with decreasging substrate temperature below 500 deg C. The decrease bellow 500 deg C reported here is observed for the first time.