Liquid phase eptiaxial growth of SiC

摘要

The characteristics of 4H and 6H-SiC epitaxial growth from the liquid phase by using a sandwich configuration are presented. The preparation procedure of the two-component solvent and the growth technqiue are described. Growth rates exceeding 300 μm/h have been obtained. The transport of solute is affected by formation of complexes within the liquid zone which decrease the growth rate. The growth rate depends mainly on the temperature gradient but is also influenced by the solvent composition. Important growth parameters such as temperature gradient and substrate off-orientation have a profound influence on the morphological stability. It is shown that if these are not properly chosen, constitutional superceding may appear. The polytype of the substrate is reproduced in the grown martial and the structural quality is good. Common defaces are discussed.