Optical studies of high-field carrier transport of InN thick film grown on GaN

摘要

Transient Raman spectroscopy has been used to study electron transport in an InN film grown oil GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Gamma valley can exceed its steady-state Value by as much as 40%. Electron velocities have been found to cut off at around 2 x 10(8) cm/s, significantly larger than those observed for other III-V semiconductors Such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices. (c) 2005 Elsevier B.V. All rights reserved.