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Optical studies of high-field carrier transport of InN thick film grown on GaN

机译:在GaN上生长InN厚膜的高场载流子传输的光学研究

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Transient Raman spectroscopy has been used to study electron transport in an InN film grown oil GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Gamma valley can exceed its steady-state Value by as much as 40%. Electron velocities have been found to cut off at around 2 x 10(8) cm/s, significantly larger than those observed for other III-V semiconductors Such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices. (c) 2005 Elsevier B.V. All rights reserved.
机译:瞬态拉曼光谱已用于研究InN薄膜生长的GaN中T = 300 K时的电子传输。我们的实验结果表明,在亚皮秒激光激发和探测下,伽马谷中载流子的电子漂移速度可以超过其状态价值高达40%。已经发现电子速度的下降速度约为2 x 10(8)cm / s,远大于其他III-V半导体(例如GaAs和InP)所观察到的速度。这些实验结果表明,InN可能是超快电子设备的优良材料。 (c)2005 Elsevier B.V.保留所有权利。

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