Growth Of Non-polar (1120)gan On A Patterned (110)si Substrate By Selective Movpe

摘要

Selective MOVPE of a (1120) a-plane GaN was attempted on a patterned (110)Si substrate. The growth of GaN was initiated on a (111) side wall of a (110)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3 × 10~7 cm~(-2) was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.