Movpe Growth Of Ga(as)sbn On Gasb Substrates

摘要

GaSb_(1-y)N_y and GaAs_(1-y-z)Sb_yN_z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ～10% and a nitrogen content of～0.08%.