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Novel Technique For Monitoring Of Movpe Processes

机译:监视Movpe过程的新技术

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Potentialities of low-coherent tandem-type interferometry for optical monitoring of substrate temperature and bending during the metalorganic vapor-phase epitaxy (MOVPE) were demonstrated. Thickness of the growing layer was monitored as well. Absolute precision of temperature measurements on sapphire substrates during the MOVPE process was limited by the calibration accuracy and reaches ± 1 ℃. The accuracy of in situ measurements of the layer thickness was as high as 2 nm (RMS). Dramatic disagreements (in the range of 10-100 ℃ depending on pressure, gas flow, temperature etc.) between readings of the thermocouple fixed inside the susceptor and the actual substrate temperature were revealed.
机译:演示了低相干串联式干涉仪在金属有机气相外延(MOVPE)期间光学监测基板温度和弯曲的潜力。还监测生长层的厚度。在MOVPE过程中,对蓝宝石衬底的温度测量的绝对精度受到校准精度的限制,达到±1℃。层厚度的原位测量精度高达2 nm(RMS)。揭示了固定在基座内部的热电偶读数与实际基板温度之间的巨大差异(在10-100℃范围内,具体取决于压力,气体流量,温度等)。

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