Vapor Pressure Of Germanium Precursors

摘要

The vapor pressure of two germanium precursors tetrakis(methoxy)germanium (Ge(OCH_3)_4, CASRN 992-91-6) and tetrakis(ethoxy)germanium (Ge(OC_2H_5)_4, CASRN 14165-55-0) was determined using a static method in the temperature range 259-303 K. The experimental vapor pressure data were fit with the Antoine equation. The mass spectra before and after degassing by vacuum distillation at low temperature are also reported and discussed.