首页> 外文期刊>Journal of Crystal Growth >Effect Of Ingan Underneath Layer On Movpe-grown Ingan/gan Blue Leds .
【24h】

Effect Of Ingan Underneath Layer On Movpe-grown Ingan/gan Blue Leds .

机译:底层甘氨酸对Movpe生长的Ingan / gan蓝led的影响。

获取原文
获取原文并翻译 | 示例
       

摘要

This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples.
机译:本文介绍了有关InGaN下层(UL)对在425至460 nm光谱范围内工作的InGaN / GaN LED的影响的研究。通过金属有机气相外延(MOVPE)生长样品。 UL的In含量在0-2.7%的范围内进行研究。通过原子力显微镜(AFM),高分辨率X射线衍射(XRD)和二次离子质谱(SIMS)对多量子阱(MQW)的表面形态和晶体结构进行了表征。通过在LED结构中的MQW堆叠下引入优化的UL,发现在20 mA注入电流下,电致发光(EL)强度增加了近50%。在所有包含UL的样品中,与参考样品相比,半峰全宽(FWHM)和EL光谱的蓝移也有所降低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号