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Quantum-dot Semiconductor Disk Lasers

机译:量子点半导体圆盘激光器

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We demonstrate quantum-dot (QD)-based, optically pumped semiconductor disk lasers (SDLs) for wavelengths ranging from 950 to 1210 nm. QDs grown either in the submonolayer (SML) or in the Stranski-Krastanow (SK) regime are employed as active layers of the SDLs which are based on two different design concepts. Output power of up to 1.4 W continuous wave (CW) is achieved with an InAs/ GaAs-SML SDL at 1040 nm. Up to 21 InGaAs SK-QD layers within a single SDL gain structure are used to realize the ground-state CW lasing with 0.3 W at 1210 nm. The SK-QD-based SDL shows temperature and pump-power stable emission. Threshold and differential efficiency do not depend on heat-sink temperature.
机译:我们演示了基于量子点(QD)的光泵浦半导体磁盘激光器(SDL),其波长范围为950至1210 nm。以亚单层(SML)或Stranski-Krastanow(SK)方式生长的QD被用作SDL的有源层,它们基于两种不同的设计概念。使用1040 nm的InAs / GaAs-SML SDL可实现高达1.4 W的连续波(CW)输出功率。在单个SDL增益结构内最多可使用21个InGaAs SK-QD层,以实现在1210 nm处具有0.3 W的基态CW激光发射。基于SK-QD的SDL可显示温度和泵浦功率的稳定排放。阈值效率和差分效率不依赖于散热器温度。

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