1150-nm Wavelength Ingaas/gaas Vcsels Incorporating Regrown Tunnel Junctions

摘要

Results of the development of all metallorganic vapor-phase epitaxy (MOVPE) GaAs-based vertical cavity surface emitting lasers (VCSELs) with a regrown tunnel junction (TJ) emitting at ～1150-nm wavelength are presented. A zero-bias-specific resistance of ～3 × 10 ~_(-4) Ω cm~2 has been obtained for the GaAs-based TJ structure. VCSEL devices incorporating 4-7-μm and 12-μm TJ mesas exhibit an ～2-3 mA threshold current. Room-temperature lasing spectra are multimode with an output power of 1 and 2 mW, respectively, and thermal roll-over is above 25 mA. A 2×2 VCSEL array of 3-μm aperture elements at 7-μm pitch yielding 0.8 mW room-temperature output power has been realized.