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Growth Parameter Optimization Of The Gainp/algainp Active Zone Of 635 Nm Red Laser Diodes

机译:635 Nm红色激光二极管Gainp / Algainp有源区的生长参数优化

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摘要

GaAs-based laser diodes emitting in the red spectral region have challenging material and thermal properties when reducing the emission wavelength towards the physical limit around 630 nm. To improve the properties of such laser diodes, we have optimized the growth parameters of the GalnP quantum wells (QW) embedded in AlGaInP. The growth temperature and the Ⅴ/Ⅲ ratio during growth of the QW was varied. By reducing the QW growth temperature from 770 to 700 ℃, an improvement of the laser performance was achieved at 635 and at 643 nm laser emission wavelength. By increasing the Ⅴ/Ⅲ ratio, a higher photoluminescence intensity could be achieved in QW test samples. Combining both approaches important laser parameters like threshold current density, differential efficiency and internal absorption were improved substantially.
机译:当将发射波长减小到接近630 nm的物理极限时,在红色光谱区域发射的基于GaAs的激光二极管具有具有挑战性的材料和热性能。为了改善此类激光二极管的性能,我们优化了嵌入AlGaInP中的GalnP量子阱(QW)的生长参数。 QW生长过程中的生长温度和Ⅴ/Ⅲ比是变化的。通过将QW生长温度从770降低到700℃,在635和643 nm的激光发射波长下实现了激光性能的提高。通过增加Ⅴ/Ⅲ比,可以在QW测试样品中获得更高的光致发光强度。将两种方法结合起来,可以显着改善重要的激光参数,例如阈值电流密度,差分效率和内部吸收。

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