Formation Of Textured Sapphire Substrates By Self-arrangement Process And Wet Etching For Ingaain Leds

摘要

We report a method of profiled sapphire substrate preparation and growth of InGaAIN light-emitting diode (LED) structures over these substrates. Sapphire substrates with textured front surface were prepared by the simple method of nanoscale gold drops formation on sapphire surface followed by etching in hot H_3PO_4 acid. Comparison of blue LEDs grown on standard (flat) and profiled sapphire substrates in one epitaxial process shows significant increase in output power due to increased light extraction without deterioration of other LED characteristics.