Control Of P-type Conduction In A-plane Ga_(1-_x)in_xn (0 < X < 0.10) Grown On R-plane Sapphire Substrate By Metalorganic Vapor-phase Epitaxy

摘要

We investigated the electrical properties of Mg-doped a-plane Ga_(1-x)In_xN (0 < x < 0.10) films grown on low-dislocation-density-undoped GaN templates on + 0.5 -off r-plane sapphire substrates by metalorganic vapor-phase epitaxy. The maximum hole concentration of 8.3 × 10~(18) cm~(-3) for x = 0.10 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga_(0.90)In_(0.10)N was as low as 50 meV.