Control Of Stress And Crystalline Quality In Gainn Films Used For Green Emitters

摘要

We succeeded in growing almost completely relaxed, high-quality, thick GalnN films on an m-plane GaN template with grooves along the < 0001 > direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GalnN film with a threading dislocation density of approximately 1 × 10~8 cm~(-2) was confirmed.