Schroedinger-equation-based quantum corrections addressing degeneracy-breaking and confinement-enhanced scattering

摘要

We review extensions of Schrodinger-equation-based quantum corrections that have been implemented within the semiclassical Monte Carlo simulator Monte Carlo of The University of Texas (MCUT) to address quantum-confinement-induced redistribution of carriers in momentum as well as real space, and confinement-enhanced scattering in n-channel MOSFETs. The significance of these quantum confinement effects and of these corrections has been illustrated via calculation of channel mobility and short-channel MOSFET drive currents for strained and unstrained devices.