Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with N~+-P~(-) junction

摘要

We propose herein a new dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with just a unipolar junction (UJ-DG MOSFET) on the source side. The UJ-DG MOSFET structure is constructed from an N+ region on the source side with the rest consisting of a P- region over the gate and drain, forming an auxiliary gate over the drain region with appropriate length and work function (named A-gate), converting the drain to an N+ region. The new structure behaves as a MOSFET, exhibiting better efficiency than the conventional double-gate MOSFET (C-DG MOSFET) thanks to the modified electric field. The amended electric field offers advantages including improved electrical characteristics, reliability, leakage current, I-ON/I-OFF ratio, gate-induced drain leakage, and electron temperature. Two-dimensional analytical models of the surface potential and electric field over the channel and drain are applied to investigate the drain current in the UT-DG MOSFET. To confirm their accuracy, the MOSFET characteristics obtained using the 2D Atlas simulator for the UJ-DG and C-DG are analyzed and compared.