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首页> 外文期刊>Journal of Computational Electronics >New p-type sp-based half-Heusler compounds LiBaX(X = Si, Ge) for spintronics and thermoelectricity via ab-initio calculations
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New p-type sp-based half-Heusler compounds LiBaX(X = Si, Ge) for spintronics and thermoelectricity via ab-initio calculations

机译:基于新的P型半Heusler化合物Libax(X = SI,GE),用于通过AB-Initio计算的闪光灯和热电

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摘要

We have investigated the structural, electronic, magnetic, elastic and thermoelectric properties of the sp-based half-Heusler LiBaX (X = Si and Ge) alloys using the full-potential linearized augmented plane wave method of density functional theory. Two approaches are employed to approximate the correlation-exchange potential, namely the generalized-gradient approximation and the modified Becke-Johnson. Both compounds free of transition metals are ferromagnetic, half metallic with a large spin-flip gaps which are appropriate for Spintronic applications. Their half-metallicity is preserved under large lattice constant and pressure change which make them promising candidates for spintronic devices. The transport properties reveal high figure of merit values making these compounds great thermoelectric candidates. Moreover, the studied half-Heuslers are mechanically stable and both of them exhibit negative formation energy and cohesion which indicate the possibility of synthesizing and stabilizing these cheap and available materials. Up to date, no experimental or theoretical studies have been carried out regarding LiBaSi, while for LiBaGe, thermoelectric properties have not been investigated yet.
机译:我们研究了使用密度泛函理论的全电位线性化增强平面波方法的SP基半风琴基(X = Si和Ge)合金的结构,电子,磁,弹性和热电性能。采用两种方法来近似相关交换电位,即广义梯度近似和修改的BECKE-JOHNSON。两种没有过渡金属的化合物是铁磁,半金属的具有大的旋转隙间隙,适用于旋转式应用。它们的半金属性在大格子常数和压力变化下保存,这使得它们为旋转式设备提供了有希望的候选者。运输特性揭示了使这些化合物的优点值的高图数是大热电候选者。此外,所研究的半发生物是机械稳定的,它们都表现出负面形成能量和内聚力,表明可以合成和稳定这些廉价和可用材料的可能性。迄今为止,没有对利比索进行的实验或理论研究,而Libasi则尚未研究热电性质。

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  • 来源
    《Journal of Computational Electronics 》 |2021年第3期| 1072-1082| 共11页
  • 作者单位

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria|Mascara Univ Fac Sci & Technol Lab LPQ3M Mascara 29000 Algeria;

    Abdel Hamid Ibn Badis Univ Lab Technol & Solids Properties Mostaganem 27000 Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    FP-LAPW; Spin-flip gaps; Half-Heusler; Thermoelectric properties; Spintronic applications;

    机译:FP-LAPW;旋转翻盖;半起点;热电性质;旋转式应用;

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