A TCAD device simulator for exotic materials and its application to a negative-capacitance FET

摘要

A new device simulator named Impulse TCAD was developed, being built on top of a nonlinear finite volume method solver, which is further based on the Python script language and its associated scientific libraries. The user can fully customize the device properties and/or equations using scripts, which allows ready handling of exotic materials with nonstandard physical models. As a demonstration, a transient analysis of a negative-capacitance field-effect transistor (NC FET) is presented. The ferroelectric material in the NC FET is handled by using the time-dependent Ginzburg-Landau-Devonshire (GLD) equation, while standard device equations are applied for the rest of the device. The simulations show that, starting from the spontaneous polarization state, the ferroelectric regions evolve into the negative-capacitance regime, showing the expected characteristics of a NC FET. They also indicate that the Ginzburg term in the GLD equation, which is related to the correlation radius rc, plays an important role in the appearance of the negative-capacitance effect. When rc is too short compared with the channel length, the ferroelectric region becomes segregated into multiple polarization domains, resulting in loss of the NC FET characteristic.