...
首页> 外文期刊>Journal of Computational Electronics >Ab initio calculations of the effect of N, Nb, and Ta doping on the electronic structure and optical properties of SnO_2
【24h】

Ab initio calculations of the effect of N, Nb, and Ta doping on the electronic structure and optical properties of SnO_2

机译:从头算计算N,Nb和Ta掺杂对SnO_2的电子结构和光学性质的影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Nanostructured nitrogen-, niobium-, and tantalum-doped tin oxides are investigated by first-principle calculations. First, the band structure, bond length, density of states, and projected density of states of pure tin oxide are evaluated. Then, the effect of nitrogen, niobium, and tantalum doping substituting O and Sn is compared with the pure case. In all cases, substitutional doping with N results in p-type conductivity whereas n-type conductivity results from Nb and Ta doping. Substitution of O with N and of Sn with Nb or Ta increases the bandgap of the structure, while substitution of Sn and Nb with N reduces the bandgap.
机译:通过第一性原理计算研究了纳米结构的氮,铌和钽掺杂的氧化锡。首先,评估纯氧化锡的能带结构,键长,状态密度和状态投影密度。然后,将氮,铌和钽掺杂代替O和Sn的效果与纯情况进行了比较。在所有情况下,用N替代掺杂都会导致p型导电,而Nb和Ta掺杂则会导致n型导电。用N取代O和用Nb或Ta取代Sn可以增加结构的带隙,而用N取代Sn和Nb可以减少结构的带隙。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号