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首页> 外文期刊>Journal of Circuits, Systems, and Computers >A TUNABLE MULTIBAND CMOS LNA FOR MOBILE WIMAX WITH HIGH LINEARITY
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A TUNABLE MULTIBAND CMOS LNA FOR MOBILE WIMAX WITH HIGH LINEARITY

机译:具有高线性度的移动WiMAX可调多频带CMOS LNA

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摘要

In this paper, a multiband low-noise amplifier (LNA) with capability of band tuning is proposed to support the Mobile WiMAX (IEEE 802.16o) standard associated with a large IIP3 at RF frequencies using multi-gated linearization techniques. Proposed LNA architecture has been optimized in terms of linearity based on a comparative analysis between four tunable LNA structures. In addition, a general survey is performed on linearization techniques (multiple-gated transistors, Derivative Superposition (DS), Modified DS). Proposed LNA is constituted of multi-gated linearization technique. Design and .simulations have been realized in 0.13 /an RF CMOS process considering a power supply of 1.2 V. Proposed LNA exhibits an IIP3 of +8.8 dBm, +14.3 dBm, and +6.4 dBm at the lower, middle, and upper bands of WIMAX, respectively. It results in a power gain of 10 dB, a noise figure below 2.5 dB and S11 of -11.5dB, - 8.6dB, and -12.7dB at the lower, middle, and upper bands. The related power dissipations are 10mW, 9.9 mW, and 9.4 mW at the lower, middle, and upper bands, respectively.
机译:本文提出了一种具有频带调谐能力的多频带低噪声放大器(LNA),以支持使用多门线性化技术在RF频率下与大型IIP3相关的移动WiMAX(IEEE 802.16o)标准。根据四个可调LNA结构之间的比较分析,已在线性方面优化了建议的LNA体系结构。此外,还对线性化技术(多栅极晶体管,导数叠加(DS),改进的DS)进行了常规调查。提议的LNA由多门线性化技术构成。考虑到1.2 V电源,已经在0.13 / RF CMOS工艺中实现了设计和仿真。拟议的LNA在其低,中和高频段的IIP3表现为+8.8 dBm,+ 14.3 dBm和+6.4 dBm。 WIMAX,分别。它产生10 dB的功率增益,低于2.5 dB的噪声系数以及在较低,中部和较高频段的S11分别为-11.5dB,-8.6dB和-12.7dB。在下部,中部和上部频带的相关功耗分别为10mW,9.9mW和9.4mW。

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