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首页> 外文期刊>Journal of Applied Physics >Determination of Field Strength for Field Evaporation and Ionization in the Field Ion Microscope
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Determination of Field Strength for Field Evaporation and Ionization in the Field Ion Microscope

机译:在场离子显微镜中确定用于蒸发和电离的场强

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摘要

The field strength required for field evaporation of tungsten and for best image conditions in the field ion microscope is measured by comparison with field electron emission of the same emitter. The evaporation field is independent of emitter radius except for radii below 150 A where the influence of free surface energy becomes noticeable. The field for the best conditions of a helium ion image of a typical emitter of 1000 A radius is 440 Mv/cm. This field increases gradually with decreasing tip radius, so that the ratio of evaporation field to best image field for tungsten decreases from 1.27 at 1000 A radius to 1.0 at about 40 A radius. The radius dependence of this ratio can be calculated by assuming that the time a hopping atom spends in the critical ionization zone is a constant fraction of the ionization time. Practical implications are that large tip radii are preferable for easily evaporating emitter materials, and small radii may be useful when field evaporation is to be studied under best image conditions.
机译:钨的场蒸发和场离子显微镜中最佳成像条件所需的场强是通过与同一发射极的场电子发射进行比较来测量的。蒸发场与辐射器半径无关,但半径低于150 A的自由表面能量的影响变得明显。对于半径为1000 A的典型发射器,氦离子图像的最佳条件场为440 Mv / cm。该场随着尖端半径的减小而逐渐增大,因此钨的蒸发场与最佳像场的比率从1000A半径处的1.27减小到大约40A半径处的1.0。可以通过假设跳变原子在临界电离区中花费的时间是电离时间的恒定分数来计算此比率的半径依赖性。实际的含义是,对于容易蒸发发射器材料而言,较大的尖端半径是可取的,而当要在最佳图像条件下研究场蒸发时,较小的半径可能会有用。

著录项

  • 来源
    《Journal of Applied Physics 》 |1961年第11期| 共4页
  • 作者单位

    Department of Physics, The Pennsylvania State University, University Park, Pennsylvania;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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