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首页> 外文期刊>Journal of Applied Physics >Magnetoelectric Effects in Cr2O3 and (Cr2O3)0.8· (Al2O3)0.2
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Magnetoelectric Effects in Cr2O3 and (Cr2O3)0.8· (Al2O3)0.2

机译:Cr2O3和(Cr2O3)0.8·(Al2O3)0.2的磁电效应

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摘要

Magnetic field induced magnetoelectric (ME) effects in Cr2O3 and (Cr2O3)0.8·(Al2O3)0.2 have been examined with an ac method as a function of temperature and magnetic field. The ME effect parallel to the c axis reverses in sign at low temperatures for both materials, and is linear in H for all temperatures up to the spin‐flop field HC after which the ME effect approaches zero. The temperature dependence of the extrema of (dE/dH) vs H leads to a measure of HC vs T which agrees with earlier antiferromagnetic resonance and magnetic moment data in similar materials. Complete reversibility of the ME effect is observed when the magnetic field exceeds HC and then returns to lower values, thus demonstrating a stable memory of the domain distribution introduced during magnetic annealing. Brief remarks are made on the angular dependence of the ME effect, and indications of nondiagonal contributions in the vicinity of HC are mentioned.
机译:已经使用交流电方法研究了在Cr2O3和(Cr2O3)0.8·(Al2O3)0.2中磁场感应的磁电(ME)随温度和磁场的变化。两种材料在低温下均平行于c轴的ME效应在符号上反转,并且在直至自旋场HC的所有温度下,ME的线性均呈H线性,此后ME效应接近零。 (dE / dH)对H极值的温度依赖性导致HC对T的测量,这与类似材料中较早的反铁磁共振和磁矩数据一致。当磁场超过HC并返回到较低的值时,观察到ME效应具有完全可逆性,从而证明了对磁性退火过程中引入的畴分布的稳定记忆。简要说明了ME效应的角度依赖性,并提到了HC附近的非对角贡献。

著录项

  • 来源
    《Journal of Applied Physics》 |1963年第4期|共2页
  • 作者

    Foner Simon; Hanabusa Mitsugu;

  • 作者单位

    National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge 39, Massachusetts;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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